MB84VD2008 Datasheet, PDF(15/30 Page) Fujitsu Component Limited. – 8M (x 16) FLASH MEMORY & 2M (x 16) STATIC RAM

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MB84VD2008 Datasheet, PDF (15/30 Pages) Fujitsu Component Limited. – 8M (x 16) FLASH MEMORY & 2M (x 16) STATIC RAM

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MB84VD2008-10/MB84VD2009-10

â¢ Write Cycle (WE control) (Flash)

ADDRESSES

3rd Bus Cycle

555H

tWC

tAS

tAH

CEf

tCS

tCH

tGHWL

tWP tWPH

tDS

A0H

tDH

Data Polling

tWHWH1

DQ7 DOUT

tRC

tCO

tFOE

tOH

DOUT

Notes: 1. PA is address of the memory location to be programmed.

2. PD is data to be programmed at byte address.

3. DQ7 is the output of the complement of the data written to the device.

4. DOUT is the output of the data written to the device.

5. Figure indicates last two bus cycles out of four bus cycle sequence

6. These waveforms are for the x16 mode. The addresses differ from x8 mode.

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