MB84VD2008 Datasheet, PDF (23/30 Pages) Fujitsu Component Limited. – 8M (x 16) FLASH MEMORY & 2M (x 16) STATIC RAM

MB84VD2008-10/MB84VD2009-10
• Read Cycle (SRAM)
Parameter
Symbol
Parameter Description
tRC
Read Cycle Time
tAA
Address Access Time
tCO
Chip Enable (CEs) Access Time
tOE
Output Enable Access Time
tBA
UB, LB Access Time
tCOE Chip Enable Low to Output Active
tOEE Output Enable Low to Output Active
tBE
UB, LB Low to Output Active
tOD
Chip Enable High to Output High-Z
tODO Output Enable High to Output High-Z
tBD
UB, LB High to Output High-Z
tOH
Output Data Hold Time
• Read Cycle (Note 1) (SRAM)
Min.
85
—
—
—
—
5
0
0
—
—
—
10
Max.
Unit
—
ns
85
ns
85
ns
45
ns
45
ns
—
ns
—
ns
—
ns
35
ns
35
ns
35
ns
—
ns
ADDRESSES
CEs
OE
UB, LB
DOUT
tRC
tAA
tCO
tOE
tOH
tOD
tBA
tBE
tOEE
tCOE
tODO
tBD
VALID DATA OUT
Note: 1. WE remains HIGH for the read cycle.
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