MB84VD2008 Datasheet, PDF (11/30 Pages) Fujitsu Component Limited. – 8M (x 16) FLASH MEMORY & 2M (x 16) STATIC RAM

MB84VD2008-10/MB84VD2009-10
s DC CHARACTERISTICS
Parame-
ter Sym- Parameter Description
bol
Test Conditions
Min.
ILI Input Leakage Current
—
–1.0
ILO Output Leakage Current
—
–1.0
ICC1f
Flash VCC Active Current VCCf = VCC Max., CEf = VIL ^{tCYCLE = 10 MHz}
(Read)
OE = VIH
tCYCLE = 5 MHz
—
—
ICC2f
Flash VCC Active Current
(Program/Erase)
VCCf = VCC Max., CEf
= VIL, OE = VIH
—
ICC3f**
Flash VCC Active Current
(Read-While-Program)
CE = VIL, OE
= VIH
—
ICC4f**
Flash VCC Active Current
(Read-While-Erase)
CE = VIL, OE
= VIH
—
Flash VCC Active Current
ICC5f (Erase-Suspend-
CE = VIL, OE = VIH
—
Program)
ICC1s
SRAM VCC Active
Current
VCCs = VCC Max.,
CEs = VIL
tCYCLE = min
—
tCYCLE = 1 MHz
—
ICC2s
SRAM VCC Active
Current
CEs = 0.2 V,
WE = VCCs – 0.2 V
tCYCLE = min
—
tCYCLE = 1 MHz
—
ISB1f
Flash VCC Standby
Current
VCCf = VCC Max., CEf = VCCf ± 0.3 V
RESET = VCCf ± 0.3 V
—
ISB2f
Flash VCC Standby
Current (RESET)
VCCf = VCC Max., RESET = VSS ± 0.3 V
—
ISB1s
SRAM VCC Standby
Current
CEs = VIH
—
VCCs = TA = 25°C
—
3.0 V
±10% ^{TA = –20 to +85°C —}
ISB2s
SRAM VCC Standby
Current
VCCs = TA = 25°C
—
CEs = VCC –0.2 V
3.3 V
±0.3 V
TA = –20 to +85°C
—
TA = 25°C
—
VCCs =
3.0 V
TA = –20 to +40°C
—
TA = –20 to +85°C —
VIL Input Low Level
—
–0.3
VIH Input High Level
—
2.2
VOL
Output Low Voltage
Level
IOL = 2.1 mA,
VCCf = VCCs = VCC Min.
—
VOH
Output High Voltage
Level
IOH = –500 µA,
VCCf = VCCs = VCC Min.
VCC – 0.5
VLKO
Flash Low VCC Lock-Out
Voltage
—
2.3
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1
—
1.5
—
1
—
—
—
—
—
—
—
Max. Unit
+1.0 µA
+1.0 µA
20
mA
10
35 mA
45 mA
45 mA
35 mA
60 mA
12 mA
50 mA
6 mA
5 µA
5 µA
2 mA
2.5 µA
55 µA
3 µA
60 µA
2 µA
5 µA
50 µA
0.6 V
VCC+0.3* V
0.4 V
—V
2.5 V
* : VCC indicate lower of VCCf or VCCs
** :Embedded Algorithm (program or erase) is in progress. (@5 MHz)
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