MRF6S19200HR3 Datasheet, PDF (9/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

Z_o = 5 Ω
f = 2040 MHz
Z_load
f = 1880 MHz
f = 2040 MHz
Z_source
f = 1880 MHz
V_DD = 28 Vdc, I_DQ = 1600 mA, P_out = 56 W Avg.
f
MHz
Z_source
W
Z_load
W
1880
2.11 - j4.27
1.99 - j0.79
1900
2.05 - j4.11
1.96 - j0.64
1920
1.98 - j3.95
1.92 - j0.49
1940
1.92 - j3.80
1.86 - j0.34
1960
1.82 - j3.63
1.78 - j0.20
1980
1.72 - j3.40
1.74 + j0.01
2000
1.74 - j3.17
1.77 + j0.15
2020
1.71 - j3.02
1.78 + j0.29
2040
1.66 - j2.85
1.75 + j0.42
Z_source = Test circuit impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Z _source
Z _load
Figure 15. Series Equivalent Source and Load Impedance
RF Device Data
Freescale Semiconductor
MRF6S19200HR3 MRF6S19200HSR3
9