MRF6S19200HR3 Datasheet, PDF (2/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1B (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Electrical Characteristics (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V_DS = 66 Vdc, V_GS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V_DS = 28 Vdc, V_GS = 0 Vdc)
Gate - Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
I_DSS
—
—
10
μAdc
I_DSS
—
—
1
μAdc
I_GSS
—
—
10
μAdc
On Characteristics
Gate Threshold Voltage
(V_DS = 10 Vdc, I_D = 372 μAdc)
Gate Quiescent Voltage
(V_DD = 28 Vdc, I_D = 1600 mAdc, Measured in Functional Test)
Drain - Source On - Voltage
(V_GS = 10 Vdc, I_D = 3.71 Adc)
Dynamic Characteristics ⁽¹⁾
Reverse Transfer Capacitance
(V_DS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
Output Capacitance
(V_DS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
Input Capacitance
(V_DS = 28 Vdc, V_GS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
V_GS(th)
1
2
3
Vdc
V_GS(Q)
2
3
4
Vdc
V_DS(on)
0.1
0.2
0.3
Vdc
C_rss
—
2.3
—
pF
C_oss
—
185
—
pF
C_iss
—
503
—
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) V_DD = 28 Vdc, I_DQ = 1600 mA, P_out = 56 W Avg., f = 1932.5 MHz and
f = 1987.5 MHz, Single - Carrier W - CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on
CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Power Gain
G_ps
15
17.9
19
dB
Drain Efficiency
η_D
26
29.5
—
%
Output Peak - to - Average Ratio @ 0.01% Probability on CCDF
PAR
5.5
5.9
—
dB
Adjacent Channel Power Ratio
ACPR
—
- 36
- 34
dBc
Input Return Loss
IRL
—
- 14
-8
dB
1. Part internally matched both on input and output.
(continued)
MRF6S19200HR3 MRF6S19200HSR3
2
RF Device Data
Freescale Semiconductor