MRF6S19200HR3 Datasheet, PDF (7/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS
−10
V_DD = 28 Vdc, I_DQ = 1600 mA
−20 ^{f1 = 1955 MHz, f2 = 1965 MHz}
Two−Tone Measurements, 10 MHz Tone Spacing
−30
−40
−50 ^{3rd Order}
5th Order
−60
7th Order
−70
1
10
100 200
P_out, OUTPUT POWER (WATTS) PEP
Figure 7. Intermodulation Distortion Products
versus Output Power
−10
V_DD = 28 Vdc, P_out = 130 W (PEP), I_DQ = 1600 mA
Two−Tone Measurements
−20 _{(f1 + f2)/2 = Center Frequency of 1960 MHz}
−30
IM3−L _IM3−U
−40
IM5−U
−50
IM5−L _IM7−U ^IM7−L
−60
−70
1
10
100
TWO−TONE SPACING (MHz)
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
1
45
0 ^Ideal
40
−1 ^Actual
35
−2 ^{−1 dB = 43.38 W}
30
−3 _ηD
−2 dB = 62.72 W
25
−3 dB = 87.05 W
−4
V_DD = 28 Vdc, I_DQ = 1600 mA, f = 1960 MHz
20
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability (CCDF)
−5
15
30
40
50
60
70
80
90
P_out, OUTPUT POWER (WATTS)
Figure 9. Output Peak - to - Average Ratio
Compression (PARC) versus Output Power
20
G_ps
19
T_C = −30_C
40
−30_C
25_C
85_C ³⁰
25_C
18
20
17
η_D
16
1
85_C
10
10
V_DD = 28 Vdc
I_DQ = 1600 mA
f = 1960 MHz
0
100 200
P_out, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
18.5
I_DQ = 1600 mA
f = 1960 MHz
18
28 V
32 V
17.5
V_DD = 24 V
17
16.5
0
20
40
60
80 100 120 140
P_out, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain versus Output Power
RF Device Data
Freescale Semiconductor
MRF6S19200HR3 MRF6S19200HSR3
7