MRF6S19200HR3 Datasheet, PDF (6/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS
21
31
η_D
20
30
19
29
18 ^Gps
28
V_DD = 28 Vdc, P_out = 56 W (Avg.)
17
I_DQ = 1600 mA, Single−Carrier W−CDMA
−0.5
0
16 ^IRL
3.84 MHz Channel Bandwidth, Input Signal PAR = 7.5 dB
@ 0.01% Probability (CCDF)
−1
−5
15
PARC
14
−1.5
−10
−2
−15
13
−2.5
−20
1880 1900 1920 1940 1960 1980 2000 2020 2040
f, FREQUENCY (MHz)
Figure 3. Output Peak - to - Average Ratio Compression (PARC)
Broadband Performance @ P_out = 56 Watts Avg.
20
38
19
η_D
V_DD = 28 Vdc, P_out = 87 W (Avg.)
I_DQ = 1600 mA, Single−Carrier W−CDMA
37
18 _Gps
17
16 IRL
15
3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01%
Probability (CCDF)
36
35
−2
−5
−2.5
−10
14
PARC
13
−3
−15
−3.5
−20
12
−4
−25
1880 1900 1920 1940 1960 1980 2000 2020 2040
f, FREQUENCY (MHz)
Figure 4. Output Peak - to - Average Ratio Compression (PARC)
Broadband Performance @ P_out = 87 Watts Avg.
20
I_DQ = 2400 mA
19
2000 mA
18
1600 mA
17
1200 mA
16
800 mA
15
V_DD = 28 Vdc, f1 = 1955 MHz, f2 = 1965 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
14
1
10
100 200
P_out, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
0
V_DD = 28 Vdc, f1 = 1955 MHz, f2 = 1965 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
−10
−20
−30 _{IDQ = 800 mA}
−40
2400 mA
−50
1200 mA
1600 mA
2000 mA
−60
1
10
100 200
P_out, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF6S19200HR3 MRF6S19200HSR3
6
RF Device Data
Freescale Semiconductor