MRF6S19200HR3 Datasheet, PDF (8/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS
10⁸
10⁷
10⁶
10⁵
90
110 130 150 170
190 210
230 250
T_J, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at V_DD = 28 Vdc, P_out = 56 W Avg., and η_D = 29.5%.
MTTF calculator available at http:/www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 12. MTTF versus Junction Temperature
W - CDMA TEST SIGNAL
100
10
1
Input Signal
0.1
0.01
0.001
0.0001
W−CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
0
2
4
6
8
10
PEAK−TO−AVERAGE (dB)
Figure 13. CCDF W - CDMA 3GPP, Test Model 1,
64 DPCH, 50% Clipping, Single - Carrier Test Signal
−10
3.84 MHz
−20
Channel BW
−30
−40
−50
−60
−70
−80
−90
−ACPR in 3.84 MHz
Integrated BW
−100
−ACPR in 3.84 MHz
Integrated BW
−110
−9 −7.2 −5.4 −3.6 −1.8 0 1.8 3.6 5.4 7.2 9
f, FREQUENCY (MHz)
Figure 14. Single - Carrier W - CDMA Spectrum
MRF6S19200HR3 MRF6S19200HSR3
8
RF Device Data
Freescale Semiconductor