MRF6S19200HR3 Datasheet, PDF (10/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

PACKAGE DIMENSIONS
B
B
(FLANGE)
H
E
A
G
1
2X Q
bbb M T A M B M
2
D
bbb M T A M
A
(FLANGE)
3
K
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
BM
M (INSULATOR)
bbb M T A M B M
N (LID)
ccc M T A M B M
C
T
SEATING
PLANE
R (LID)
ccc M T A M B M
S (INSULATOR)
aaa M T A M B M
F
CASE 465 - 06
ISSUE G
NI - 780
MRF6S19200HR3
INCHES
DIM MIN MAX
A 1.335 1.345
B 0.380 0.390
C 0.125 0.170
D 0.495 0.505
E 0.035 0.045
F 0.003 0.006
G 1.100 BSC
H 0.057 0.067
K 0.170 0.210
M 0.774 0.786
N 0.772 0.788
Q .118 .138
R 0.365 0.375
S 0.365 0.375
aaa 0.005 REF
bbb 0.010 REF
ccc 0.015 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
MILLIMETERS
MIN MAX
33.91 34.16
9.65 9.91
3.18 4.32
12.57 12.83
0.89 1.14
0.08 0.15
27.94 BSC
1.45 1.70
4.32 5.33
19.66 19.96
19.60 20.00
3.00 3.51
9.27 9.53
9.27 9.52
0.127 REF
0.254 REF
0.381 REF
4X U
(FLANGE)
B
4X Z
(LID)
1
B
(FLANGE)
H
E
A
2
D
bbb M T A M
A
(FLANGE)
2X K
BM
N (LID)
ccc M T A M
M (INSULATOR)
bbb M T A M
3
C
T
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
R (LID)
BM
ccc M T A M B M
S (INSULATOR)
BM
aaa M T A M B M
F
CASE 465A - 06
ISSUE H
NI - 780S
MRF6S19200HSR3
INCHES
DIM MIN MAX
A 0.805 0.815
B 0.380 0.390
C 0.125 0.170
D 0.495 0.505
E 0.035 0.045
F 0.003 0.006
H 0.057 0.067
K 0.170 0.210
M 0.774 0.786
N 0.772 0.788
R 0.365 0.375
S 0.365 0.375
U −−− 0.040
Z −−− 0.030
aaa 0.005 REF
bbb 0.010 REF
ccc 0.015 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
5. SOURCE
MILLIMETERS
MIN MAX
20.45 20.70
9.65 9.91
3.18 4.32
12.57 12.83
0.89 1.14
0.08 0.15
1.45 1.70
4.32 5.33
19.61 20.02
19.61 20.02
9.27 9.53
9.27 9.52
−−− 1.02
−−− 0.76
0.127 REF
0.254 REF
0.381 REF
MRF6S19200HR3 MRF6S19200HSR3
10
RF Device Data
Freescale Semiconductor