MRF6S19200HR3 Datasheet, PDF(3/12 Page) Freescale Semiconductor, Inc

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MRF6S19200HR3 Datasheet, PDF (3/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

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Table 4. Electrical Characteristics (TC = 25Â°C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1600 mA, 1930 - 1990 MHz Bandwidth

IMD Symmetry @ 130 W PEP, Pout where IMD Third Order

Intermodulation ` 30 dBc

IMDsym

(Delta IMD Third Order Intermodulation between Upper and Lower

Sidebands > 2 dB)

VBW Resonance Point

(IMD Third Order Intermodulation Inflection Point)

VBWres

Gain Flatness in 60 MHz Bandwidth @ Pout = 56 W Avg.

Average Deviation from Linear Phase in 60 MHz Bandwidth

@ Pout = 130 W CW

Average Group Delay @ Pout = 130 W CW, f = 1960 MHz

Part - to - Part Insertion Phase Variation @ Pout = 130 W CW,

f = 1960 MHz, Six Sigma Window

0.6

Î¦

1.94

Delay

2.44

ÎÎ¦

59.4

Gain Variation over Temperature

( - 30Â°C to +85Â°C)

ÎG

0.04

Unit

MHz

Â°

dB/Â°C

RF Device Data

Freescale Semiconductor

MRF6S19200HR3 MRF6S19200HSR3

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