MRF6S19200HR3 Datasheet, PDF (1/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 1930 to
1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be
used in Class AB and Class C for PCN - PCS/cellular radio applications.
• Typical Single - Carrier W - CDMA Performance: V_DD = 28 Volts, I_DQ =
1600 mA, P_out = 56 Watts Avg., Full Frequency Band, 3GPP Test Model 1,
64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain — 17.9 dB
Drain Efficiency — 29.5%
Device Output Signal PAR — 5.9 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — - 36 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 130 Watts CW
Output Power
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
• Optimized for Doherty Applications
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRF6S19200H
Rev. 0, 3/2008
MRF6S19200HR3
MRF6S19200HSR3
1930 - 1990 MHz, 56 W AVG., 28 V
SINGLE W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF6S19200HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF6S19200HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
Gate - Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature ^(1,2)
CW Operation @ T_C = 25°C
Derate above 25°C
V_DSS
V_GS
V_DD
T_stg
T_C
T_J
CW
- 0.5, +66
- 6.0, +10
32, +0
- 65 to +150
150
225
130
0.49
Vdc
Vdc
Vdc
°C
°C
°C
W
W/°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value ^(2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 110°C, 89 W CW
Case Temperature 100°C, 55 W CW
R_θJC
0.35
0.36
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6S19200HR3 MRF6S19200HSR3
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