K60P100M100SF2 Datasheet, PDF (34/73 Pages) Freescale Semiconductor, Inc – Up to 100 MHz ARM Cortex-M4 core with DSP instructions delivering 1.25 Dhrystone MIPS per MHz

Peripheral operating requirements and behaviors
Table 21. NVM reliability specifications (continued)
Symbol Description
Min.
t_nvmretd1k Data retention after up to 1 K cycles
10
t_nvmretd100 Data retention after up to 100 cycles
15
n_nvmcycd Cycling endurance
10 K
FlexRAM as EEPROM
t_nvmretee100 Data retention up to 100% of write endurance
5
t_nvmretee10 Data retention up to 10% of write endurance
10
t_nvmretee1 Data retention up to 1% of write endurance
15
Write endurance
n_nvmwree16
n_nvmwree128
n_nvmwree512
n_nvmwree4k
n_nvmwree32k
• EEPROM backup to FlexRAM ratio = 16
• EEPROM backup to FlexRAM ratio = 128
• EEPROM backup to FlexRAM ratio = 512
• EEPROM backup to FlexRAM ratio = 4096
• EEPROM backup to FlexRAM ratio =
32,768
35 K
315 K
1.27 M
10 M
80 M
Typ.¹
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
Max.
—
—
—
—
—
—
—
—
—
—
—
Unit
years
years
cycles
years
years
years
writes
writes
writes
writes
writes
Notes
2
2
3
2
2
2
4
1. Typical data retention values are based on intrinsic capability of the technology measured at high temperature derated to
25°C. For additional information on how Freescale defines typical data retention, please refer to Engineering Bulletin
EB618.
2. Data retention is based on T_javg = 55°C (temperature profile over the lifetime of the application).
3. Cycling endurance represents number of program/erase cycles at -40°C ≤ T_j ≤ 125°C.
4. Write endurance represents the number of writes to each FlexRAM location at -40°C ≤Tj ≤ 125°C influenced by the cycling
endurance of the FlexNVM (same value as data flash) and the allocated EEPROM backup per subsystem. Minimum value
assumes all byte-writes to FlexRAM.
6.4.1.5 Write endurance to FlexRAM for EEPROM
When the FlexNVM partition code is not set to full data flash, the EEPROM data set size
can be set to any of several non-zero values.
The bytes not assigned to data flash via the FlexNVM partition code are used by the
FTFL to obtain an effective endurance increase for the EEPROM data. The built-in
EEPROM record management system raises the number of program/erase cycles that can
be attained prior to device wear-out by cycling the EEPROM data through a larger
EEPROM NVM storage space.
While different partitions of the FlexNVM are available, the intention is that a single
choice for the FlexNVM partition code and EEPROM data set size is used throughout the
entire lifetime of a given application. The EEPROM endurance equation and graph
shown below assume that only one configuration is ever used.
Writes_subsystem =
EEPROM – 2 × EEESPLIT × EEESIZE
EEESPLIT × EEESIZE
× Write_efficiency × n_nvmcycd
K60 Sub-Family Data Sheet Data Sheet, Rev. 4, 3/2011.
34
Preliminary
Freescale Semiconductor, Inc.