K60P100M100SF2 Datasheet, PDF (32/73 Pages) Freescale Semiconductor, Inc – Up to 100 MHz ARM Cortex-M4 core with DSP instructions delivering 1.25 Dhrystone MIPS per MHz

Peripheral operating requirements and behaviors
6.4.1.2 Flash timing specifications — commands
Table 19. Flash command timing specifications
Symbol
t_rd1blk256k
Description
Read 1s Block execution time
• 256 KB data flash
Min.
—
Typ.
—
Max.
1.4
t_rd1sec2k Read 1s Section execution time (flash sector)
—
—
40
t_pgmchk Program Check execution time
—
—
35
t_rdrsrc Read Resource execution time
—
—
35
t_pgm4 Program Longword execution time
—
50
TBD
Erase Flash Block execution time
t_ersblk256k
• 256 KB data flash
—
160
800
t_ersscr Erase Flash Sector execution time
—
Program Section execution time
t_pgmsec512
• 512 B flash
—
t_pgmsec1k
• 1 KB flash
—
t_pgmsec2k
• 2 KB flash
—
t_rd1all Read 1s All Blocks execution time
—
t_rdonce Read Once execution time
—
t_pgmonce Program Once execution time
—
t_ersall Erase All Blocks execution time
—
t_vfykey Verify Backdoor Access Key execution time
—
Program Partition for EEPROM execution time
t_pgmpart256k
• 256 KB FlexNVM
—
20
TBD
TBD
TBD
—
—
50
320
—
175
100
TBD
TBD
TBD
2.8
35
TBD
1600
35
TBD
Set FlexRAM Function execution time:
t_setram32k
t_setram256k
• 32 KB EEPROM backup
• 256 KB EEPROM backup
—
TBD
TBD
—
TBD
TBD
Byte-write to FlexRAM for EEPROM operation
t_eewr8bers Byte-write to erased FlexRAM location execution
—
100
time
Byte-write to FlexRAM execution time:
t_eewr8b32k
t_eewr8b64k
t_eewr8b128k
t_eewr8b256k
• 32 KB EEPROM backup
• 64 KB EEPROM backup
• 128 KB EEPROM backup
• 256 KB EEPROM backup
—
TBD
—
TBD
—
TBD
—
TBD
Word-write to FlexRAM for EEPROM operation
TBD
TBD
1.5
TBD
2.5
Table continues on the next page...
Unit
ms
μs
μs
μs
μs
ms
ms
ms
ms
ms
ms
μs
μs
ms
μs
ms
ms
ms
μs
ms
ms
ms
ms
Notes
1
1
1
2
2
1
2
1
3
K60 Sub-Family Data Sheet Data Sheet, Rev. 4, 3/2011.
32
Preliminary
Freescale Semiconductor, Inc.