K20P121M100SF2 Datasheet, PDF (32/68 Pages) Freescale Semiconductor, Inc – Up to 100 MHz ARM Cortex-M4 core with DSP instructions delivering 1.25 Dhrystone MIPS per MHz

Peripheral operating requirements and behaviors
6.4.1.3 Flash (FTFL) current and power specfications
Table 20. Flash (FTFL) current and power specfications
Symbol
I_{DD_PGM}
Description
Worst case programming current in program flash
Typ.
Unit
10
mA
6.4.1.4 Reliability specifications
Table 21. NVM reliability specifications
Symbol Description
Min.
Program Flash
t_nvmretp10k Data retention after up to 10 K cycles
5
t_nvmretp1k Data retention after up to 1 K cycles
10
t_nvmretp100 Data retention after up to 100 cycles
15
n_nvmcycp Cycling endurance
10 K
Data Flash
t_nvmretd10k Data retention after up to 10 K cycles
5
t_nvmretd1k Data retention after up to 1 K cycles
10
t_nvmretd100 Data retention after up to 100 cycles
15
n_nvmcycd Cycling endurance
10 K
FlexRAM as EEPROM
t_nvmretee100 Data retention up to 100% of write endurance
5
t_nvmretee10 Data retention up to 10% of write endurance
10
t_nvmretee1 Data retention up to 1% of write endurance
15
Write endurance
n_nvmwree16
n_nvmwree128
n_nvmwree512
n_nvmwree4k
n_nvmwree32k
• EEPROM backup to FlexRAM ratio = 16
• EEPROM backup to FlexRAM ratio = 128
• EEPROM backup to FlexRAM ratio = 512
• EEPROM backup to FlexRAM ratio = 4096
• EEPROM backup to FlexRAM ratio =
32,768
35 K
315 K
1.27 M
10 M
80 M
Typ.¹
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
Max.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
years
years
years
cycles
years
years
years
cycles
years
years
years
writes
writes
writes
writes
writes
Notes
2
2
2
3
2
2
2
3
2
2
2
4
1. Typical data retention values are based on intrinsic capability of the technology measured at high temperature derated to
25°C. For additional information on how Freescale defines typical data retention, please refer to Engineering Bulletin
EB618.
2. Data retention is based on T_javg = 55°C (temperature profile over the lifetime of the application).
3. Cycling endurance represents number of program/erase cycles at -40°C ≤ T_j ≤ 125°C.
4. Write endurance represents the number of writes to each FlexRAM location at -40°C ≤Tj ≤ 125°C influenced by the cycling
endurance of the FlexNVM (same value as data flash) and the allocated EEPROM backup per subsystem. Minimum value
assumes all byte-writes to FlexRAM.
K20 Sub-Family Data Sheet Data Sheet, Rev. 4, 3/2011.
32
Preliminary
Freescale Semiconductor, Inc.