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K20P121M100SF2 Datasheet, PDF (31/68 Pages) Freescale Semiconductor, Inc – Up to 100 MHz ARM Cortex-M4 core with DSP instructions delivering 1.25 Dhrystone MIPS per MHz
Peripheral operating requirements and behaviors
Table 19. Flash command timing specifications (continued)
Symbol Description
tersall Erase All Blocks execution time
tvfykey Verify Backdoor Access Key execution time
Program Partition for EEPROM execution time
tpgmpart256k
• 256 KB FlexNVM
Min.
—
—
—
Typ.
320
—
175
Max.
1600
35
TBD
Unit
Notes
ms
2
μs
1
ms
Set FlexRAM Function execution time:
tsetram32k
tsetram256k
• 32 KB EEPROM backup
• 256 KB EEPROM backup
—
TBD
TBD
ms
—
TBD
TBD
ms
Byte-write to FlexRAM for EEPROM operation
teewr8bers Byte-write to erased FlexRAM location execution
—
100
TBD
μs
3
time
Byte-write to FlexRAM execution time:
teewr8b32k
teewr8b64k
teewr8b128k
teewr8b256k
• 32 KB EEPROM backup
• 64 KB EEPROM backup
• 128 KB EEPROM backup
• 256 KB EEPROM backup
—
TBD
TBD
ms
—
TBD
1.5
ms
—
TBD
TBD
ms
—
TBD
2.5
ms
Word-write to FlexRAM for EEPROM operation
teewr16bers Word-write to erased FlexRAM location
execution time
—
100
TBD
μs
Word-write to FlexRAM execution time:
teewr16b32k
teewr16b64k
teewr16b128k
teewr16b256k
• 32 KB EEPROM backup
• 64 KB EEPROM backup
• 128 KB EEPROM backup
• 256 KB EEPROM backup
—
TBD
TBD
ms
—
TBD
1.5
ms
—
TBD
TBD
ms
—
TBD
2.5
ms
Longword-write to FlexRAM for EEPROM operation
teewr32bers Longword-write to erased FlexRAM location
execution time
—
200
TBD
μs
Longword-write to FlexRAM execution time:
teewr32b32k
teewr32b64k
teewr32b128k
teewr32b256k
• 32 KB EEPROM backup
• 64 KB EEPROM backup
• 128 KB EEPROM backup
• 256 KB EEPROM backup
—
TBD
TBD
ms
—
TBD
2.7
ms
—
TBD
TBD
ms
—
TBD
3.7
ms
1. Assumes 25MHz flash clock frequency.
2. Maximum times for erase parameters based on expectations at cycling end-of-life.
3. For byte-writes to an erased FlexRAM location, the aligned word containing the byte must be erased.
K20 Sub-Family Data Sheet Data Sheet, Rev. 4, 3/2011.
Freescale Semiconductor, Inc.
Preliminary
31