MC9S12DT128_1002 Datasheet, PDF (112/140 Pages) Freescale Semiconductor, Inc – Device User Guide

Device User Guide — 9S12DT128DGV2/D V02.17
Table A-12 NVM Reliability Characteristics¹
Conditions are shown in (Table A-4) unless otherwise noted
Num C
Rating
Symbol Min
Typ
Max Unit
Flash Reliability Characteristics
Data retention after 10,000 program/erase cycles at an
1 C _{average junction temperature of TJavg ≤ 85°C}
15
t_FLRET
Data retention with <100 program/erase cycles at an
2 C _{average junction temperature TJavg ≤ 85°C}
20
100²
100²
—
Years
—
Number of program/erase cycles
3 C _{(–40°C ≤ TJ ≤ 0°C)}
Number of program/erase cycles
4 C _{(0°C ≤ TJ ≤ 140°C)}
—
10,000
—
n_FL
Cycles
—
10,000 _100,000³
EEPROM Reliability Characteristics
Data retention after up to 100,000 program/erase cycles
5 C _{at an average junction temperature of TJavg ≤ 85°C}
15
t_EEPRET
Data retention with <100 program/erase cycles at an
6 C _{average junction temperature TJavg ≤ 85°C}
20
100²
100²
—
Years
—
Number of program/erase cycles
7 C _{(–40°C ≤ TJ ≤ 0°C)}
Number of program/erase cycles
8 C _{(0°C < TJ ≤ 140°C)}
10,000
—
—
n_EEP
Cycles
100,000 _300,000³
—
NOTES:
1. T_Javg will not exeed 85°C considering a typical temperature profile over the lifetime of a consumer, industrial or automotive
application.
2. Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated
to 25°C using the Arrhenius equation. For additional information on how Freescale defines Typical Data Retention, please
refer to Engineering Bulletin EB618.
3. Spec table quotes typical endurance evaluated at 25°C for this product family, typical endurance at various temperature
can be estimated using the graph below. For additional information on how Freescale defines Typical Endurance, please
refer to Engineering Bulletin EB619.
114
Freescale Semiconductor