FGAF20N60SMD Datasheet, PDF (8/10 Pages) Fairchild Semiconductor – 600 V, 20 A Field Stop IGBT

Typical Performance Characteristics
Figure 25. Reverse Recovery Time
40
35
30
di/dt = 100A/µs
25
di/dt = 200A/µs
20
5
10
15
20
Forward Current, I_F [A]
Figure 26.Transient Thermal Impedance of IGBT
3
1 0.5
0.2
0.1
0.1 ^0.05
0.02
0.01
0.01 ^{single pulse}
1E-3
1E-5
1E-4
P_DM
t₁
t₂
Duty Factor, D = t1/t2
Peak T_j = Pdm x Zthjc + T_C
1E-3
0.01
0.1
1
Rectangular Pulse Duration [sec]
10
100
Figure 27.Transient Thermal Impedance of Diode
5
0.5
1
0.2
0.1
0.05
0.02
0.1
0.01
single pulse
0.01
1E-5
1E-4
P_DM
t₁
t₂
Duty Factor, D = t1/t2
Peak T_j = Pdm x Zthjc + T_C
1E-3
0.01
0.1
1
Rectangular Pulse Duration [sec]
10
100
©2012 Fairchild Semiconductor Corporation
8
FGAF20N60SMD Rev. C2
www.fairchildsemi.com