FGAF20N60SMD Datasheet, PDF (3/10 Pages) Fairchild Semiconductor – 600 V, 20 A Field Stop IGBT

Electrical Characteristics of the IGBT (Continued)
Symbol
Parameter
Q_g
Total Gate Charge
Q_ge
Gate to Emitter Charge
Q_gc
Gate to Collector Charge
Test Conditions
V_CE = 400V, I_C = 20A,
V_GE = 15V
Min.
-
-
-
Typ.
64
6.2
32
Max
-
-
-
Unit
nC
nC
nC
Electrical Characteristics of the Diode T_C = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
V_FM
Diode Forward Voltage
I_F = 10A
T_C = 25^oC
T_C = 175^oC
E_rec
Reverse Recovery Energy
T_C = 175^oC
t_rr
Diode Reverse Recovery Time I_F =10A, dI_F/dt = 200A/µs
T_C = 25^oC
T_C = 175^oC
Q_rr
Diode Reverse Recovery Charge
T_C = 25^oC
T_C = 175^oC
Min.
-
-
-
-
-
-
-
Typ.
2.3
1.67
13.8
26.7
88.2
42
245
Max
-
-
-
-
-
-
-
Unit
V
uJ
ns
nC
©2012 Fairchild Semiconductor Corporation
3
FGAF20N60SMD Rev. C2
www.fairchildsemi.com