FGAF20N60SMD Datasheet, PDF (4/10 Pages) Fairchild Semiconductor – 600 V, 20 A Field Stop IGBT

Typical Performance Characteristics
Figure 1. Typical Output Characteristics
65
60 ^TC ^{= 25oC}
20V 12V
15V
10V
50
40
30
20
V_GE = 8V
10
0
0.0 1.0 2.0 3.0 4.0 5.0 6.0
Collector-Emitter Voltage, V_CE [V]
Figure 3. Typical Saturation Voltage
Characteristics
60
Common Emitter
50
V_GE = 15V
T_C = 25^oC
40 ^{TC = 175oC}
30
20
10
0
0.0
1.0
2.0
3.0
4.0
Collector-Emitter Voltage, V_CE [V]
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
3.0
Common Emitter
V_GE = 15V
2.5
40A
Figure 2. Typical Output Characteristics
65
60 ^TC ^{= 175oC}
50
20V
12V
15V
10V
40
30
V_GE = 8V
20
10
0
0.0 1.0 2.0 3.0 4.0 5.0 6.0
Collector-Emitter Voltage, V_CE [V]
Figure 4. Transfer Characteristics
60
Common Emitter
V_CE = 20V
50 _{TC = 25}o_C
T_C = 175^oC
40
30
20
10
0
0
2
4
6
8
10 12
Gate-Emitter Voltage,V_GE [V]
Figure 6. Saturation Voltage vs. V_GE
20
Common Emitter
T_C = -40^oC
15
2.0
20A
1.5
I_C = 10A
1.0
25 50 75 100 125 150 175
Collector-EmitterCase Temperature, T_C [^oC]
10
20A
I_C = 10A
40A
5
0
4
8
12
16
20
Gate-Emitter Voltage, V_GE [V]
©2012 Fairchild Semiconductor Corporation
4
FGAF20N60SMD Rev. C2
www.fairchildsemi.com