FGAF20N60SMD Datasheet, PDF (6/10 Pages) Fairchild Semiconductor – 600 V, 20 A Field Stop IGBT

Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Gate Resistance
1000
100
t_d(off)
10
t_f
Common Emitter
V_CC = 400V, V_GE = 15V
I_C = 20A
T_C = 25^oC
T_C = 175^oC
1
0
10
20
30
40
50
Gate Resistance, R_G [Ω]
Figure 15. Turn-off Characteristics vs.
Collector Current
1000
Common Emitter
V_GE = 15V, R_G = 10Ω
T_C = 25^oC
T_C = 175^oC
100
t_d(off)
t_f
10
10
20
30
40
Collector Current, I_C [A]
Figure 17. Switching Loss vs.
Collector Current
10000
E_on
1000
100
10
1
10
E_off
Common Emitter
V_GE = 15V, R_G = 10Ω
T_C = 25^oC
T_C = 175^oC
20
30
40
Collector Current, I_C [A]
Figure 14. Turn-on Characteristics vs.
Collector Current
100
t_r
10
t_d(on)
Common Emitter
V_GE = 15V, R_G = 10Ω
T_C = 25^oC
T_C = 175^oC
1
10
20
30
40
Collector Current, I_C [A]
Figure 16. Switching Loss vs.
Gate Resistance
1000
E_on
E_off
100
10
0
Common Emitter
V_CC = 400V, V_GE = 15V
I_C = 20A
T_C = 25^oC
T_C = 175^oC
10 20 30 40 50
Gate Resistance, R_G [Ω]
Figure 18. Turn off Switching
SOA Characteristics
100
10
Safe Operating Area
V_GE = 15V, T_C = 175^oC
1
1
10
100
Collector-Emitter Voltage, V_CE [V]
1000
©2012 Fairchild Semiconductor Corporation
6
FGAF20N60SMD Rev. C2
www.fairchildsemi.com