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FGAF20N60SMD Datasheet, PDF (2/10 Pages) Fairchild Semiconductor – 600 V, 20 A Field Stop IGBT
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Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(Diode)
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Typ.
-
-
-
Max.
2.0
4.0
40
Package Marking and Ordering Information
Device Marking
Device
FGAF20N60SMD FGAF20N60SMD
Package
TO3-PF
Reel Size
-
Tape Width
-
Unit
oC/W
oC/W
oC/W
Quantity
30
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
Off Characteristics
BVCES
∆BVCES
∆TJ
ICES
IGES
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA
Temperature Coefficient of Breakdown
Voltage
VGE = 0V, IC = 250µA
Collector Cut-Off Current
G-E Leakage Current
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat) Collector to Emitter Saturation Voltage
IC = 250µA, VCE = VGE
IC = 20A, VGE = 15V
IC = 20A, VGE = 15V,
TC = 175oC
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
VCC = 400V, IC = 20A,
RG = 10Ω, VGE = 15V,
Inductive Load, TC = 25oC
VCC = 400V, IC = 20A,
RG = 10Ω, VGE = 15V,
Inductive Load, TC = 175oC
600
-
-
V
-
0.62
-
V/oC
-
-
250
µA
-
-
±400
nA
3.5
4.7
6.0
V
-
1.7
-
V
-
1.9
-
V
-
925
-
pF
-
89
-
pF
-
30
-
pF
-
12
-
ns
-
22
-
ns
-
91
-
ns
-
21
27
ns
-
452
-
uJ
-
141
187
uJ
-
593
-
uJ
-
12
-
ns
-
19
-
ns
-
93
-
ns
-
16
-
ns
-
667
-
uJ
-
317
-
uJ
-
984
-
uJ
©2012 Fairchild Semiconductor Corporation
2
FGAF20N60SMD Rev. C2
www.fairchildsemi.com
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