FGAF20N60SMD Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – 600 V, 20 A Field Stop IGBT

April 2013
FGAF20N60SMD
600 V, 20 A Field Stop IGBT
Features
• Maximum Junction Temperature : T_J = 175^oC
• Positive Temperaure Co-efficient for easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: V_CE(sat) = 1.7 V(Typ.) @ I_C = 20 A
• High Input Impedance
• Fast Swiching: E_OFF = 7 uJ/A
• Tightened Parameter Distribution
• RoHS Compliant
Applications
• Sewing Machine, CNC
• Home Appliances, Motor-Control
General Description
Using novel field stop IGBT technology, Fairchild^®’s new series
of field stop 2^nd generation IGBTs offer the optimum perfor-
mance for solar inverter, UPS, welder and PFC applications
where low conduction and switching losses are essential.
C
Absolute Maximum Ratings
Symbol
V_CES
V_GES
I_C
I_{CM (1)}
I_F
I_{FM (1)}
P_D
T_J
T_stg
T_L
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
@ T_C = 25^oC
@ T_C = 100^oC
Pulsed Collector Current
Diode Forward Current
Diode Forward Current
@ T_C = 25^oC
@ T_C = 100^oC
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
@ T_C = 25^oC
@ T_C = 100^oC
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
G
E
Ratings
600
± 20
40
20
60
20
10
60
75
37.5
-55 to +175
-55 to +175
300
Unit
V
V
A
A
A
A
A
A
W
W
o_C
o_C
o_C
©2012 Fairchild Semiconductor Corporation
1
FGAF20N60SMD Rev. C2
www.fairchildsemi.com