FGAF20N60SMD Datasheet, PDF (5/10 Pages) Fairchild Semiconductor – 600 V, 20 A Field Stop IGBT

Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V_GE
20
Common Emitter
T_C = 25^oC
15
10
20A
I_C = 10A
40A
5
0
4
8
12
16
20
Gate-Emitter Voltage, V_GE [V]
Figure 9. Capacitance Characteristics
2000
1000
C_ies
C_oes
100
Common Emitter
V_GE = 0V, f = 1MHz
T_C = 25^oC
C_res
20
5
10
15
20
25
30
Collector-Emitter Voltage, V_CE [V]
Figure 11. SOA Characteristics
100
10µs
10
100µs
1ms
10ms
1
DC
0.1 ^*Notes:
1. T_C = 25^oC
2. T_J = 175^oC
3. Single Pulse
0.01
1
10
100
Collector-Emitter Voltage, V_CE [V]
1000
Figure 8. Saturation Voltage vs. V_GE
20
Common Emitter
T_C = 175^oC
16
12
8
10A
4
I_C = 20A
40A
0
4
8
12
16
20
Gate-Emitter Voltage, V_GE [V]
Figure 10. Gate charge Characteristics
15
Common Emitter
T_C = 25^oC
12
V_CC = 200V
400V
300V
9
6
3
0
0
20
40
60
80
Gate Charge, Q_g [nC]
Figure 12. Turn-on Characteristics vs.
Gate Resistance
100
10
1
0
t_r
t_d(on)
Common Emitter
V_CC = 400V, V_GE = 15V
I_C = 20A
T_C = 25^oC
T_C = 175^oC
10
20
30
40
50
Gate Resistance, R_G [Ω]
©2012 Fairchild Semiconductor Corporation
5
FGAF20N60SMD Rev. C2
www.fairchildsemi.com