FGAF20N60SMD Datasheet, PDF (7/10 Pages) Fairchild Semiconductor – 600 V, 20 A Field Stop IGBT

Typical Performance Characteristics
Figure 19. Current Derating
35
Common Emitter
30
V_GE = 15V
25
20
15
10
5
0
25 50 75 100 125 150 175
T_C, Case Temperature [^oC]
Figure 21. Load Current Vs. Frequency
250
V_CC = 400V
load Current : peak of square wave
200
T_C = 75^oC
150
T_C = 100^oC
100
50 Duty cycle : 50%
T = 100^oC
C
Powe Dissipation = 31.3 W
0
1k
10k
100k
1M
Switching Frequency, f [Hz]
Figure 23. Reverse Current
1000
100
T_J = 175^oC
10
1
T_J = 100^oC
0.1
T_J = 25^oC
0.01
50
200
400
600
Reverse Voltage, V_R [V]
Figure 20. Power Dissipation
80
Common Emitter
70
V_GE = 15V
60
50
40
30
20
10
0
25 50 75 100 125 150 175
T_C, Case Temperature [^oC]
Figure 22. Forward Characteristics
100
10
T_C = 25^oC
T_C = 175^oC
1
00.5
1
2
3
4
Forward Voltage, V_F [V]
Figure 24. Stored Charge
75
50
di/dt = 200A/µs
25
di/dt = 100A/µs
0
5
10
15
20
Forward Current, I_F [A]
©2012 Fairchild Semiconductor Corporation
7
FGAF20N60SMD Rev. C2
www.fairchildsemi.com