SI8513-C-IS Datasheet, PDF (8/37 Pages) List of Unclassifed Manufacturers – Si85XX UNIDIRECTIONAL AC CURRENT SENSORS

Si85xx
Table 7. Thermal Characteristics
Parameter
Symbol
IC Junction-to-Air Thermal Resistance
_JA
Test Condition
SOIC-20 4x4 mm
QFN
85
55
Unit
°C/W
40
VDD = 5.5 V
30
IIN to IOUT = 20 Amps
20
10
0
0
50
100
150
200
Case Temperature (ºC)
Figure 1. SOIC-20 Thermal Derating Curve, Dependence of Safety Limiting Values
with Case Temperature per DIN EN 60747-5-2
Table 8. Absolute Maximum Ratings¹
Parameter
Symbol
Min
Typ
Max Units
Storage temperature
Ambient temperature under bias
Junction Temperature
Supply voltage
Voltage on any pin with respect to ground
(not including IIN, IOUT)
T_STG
T_A
T_J
V_DD
V_IN
–65
—
+150
°C
–40
—
+125
°C
—
—
150
°C
—
—
5.75
V
–0.5
— VDD + 0.5 V
Output Current Drive
Lead solder temperature (10 s)
L_O
—
—
10
mA
—
—
260
ºC
Maximum Input Current Rate of Change
—
—
1000 A/µs
Maximum Peak AC Input Current Limit
Thermal Limit (DC Current)²
—
—
200
A
—
—
30
A
Maximum Isolation Voltage (QFN)
—
—
1400
V_RMS
Maximum Isolation Voltage (SOIC-20)
—
—
6000
V_RMS
ESD (CDM)
JEDEC (JESD22-C101C) –1.5
+1.5
kV
ESD (HBM)
JEDEC (JESD22-A114E) –2500
+2500
V
ESD (MM)
JEDEC (JESD22-A115A) –250
+ 250
V
Notes:
1. Permanent device damage may occur if the absolute maximum ratings are exceeded. Functional operation should be
restricted to conditions as specified in the operational sections of this data sheet. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2. Refer to “AN329: Extending the Full-Scale Range of the Si85xx” for more information.
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Preliminary Rev. 0.4