M11L416256SA Datasheet, PDF (9/16 Pages) Elite Semiconductor Memory Technology Inc. – 256 K x 16 DRAM EDO PAGE MODE

EliteMT
M11L416256SA
READ WRITE CYCLE
(LATE WRITE and READ-MODIFY-WRITE CYCLES)
VIH
RAS _VIL
tCRP
tRWC
tRAS
tRCD
tCSH
tRSH
tCAS,tCLCH
VIH
CASL,CASH _VIL
tASR
tAR
tRAD
tRAH
tASC
tRAL
tCAH
VIH
ADDR _VIL
WE
VIH
VIL
I/O
VI/O H
VI/O L
VIH
OE _VIL
ROW
COLUMN
tRCS
tRWD
tCWD
tAWD
tCWL
tRWL
tWP
OPEN
tCLZ
tAA
tRAC
tCAC
tOAC
VALID DOUT
tOFF2
tDS
tDH
VALID DIN
tOEH
EDO-PAGE-MODE READ CYCLE
tRP
ROW
VIH
RAS _VIL
VIH
CASL,CASH _VIL
ADDR
VIH
VIL
VIH
WE _VIL
I/O ^VOH
VOL
VIH
OE _VIL
tRASC
tRP
tCRP
tCSH
tRCD
tPC (NOTE2)
tRSH
tCAS,tCLCH
tCP
tCAS,tCLCH
tCP
tCAS,tCLCH
tCP
tASR
tRAD
tRAH
ROW
tAR
tASC
tCAH
COLUMN
tRCS
tASC
tCAH
COLUMN
tASC
tCAH
tRAL
COLUMN
tRCH
ROW
tRRH
OPEN
tCLZ
tAA
tRAC
tCAC
tO AC
tOES
tCOH
tAA
tACP
tCAC
VALID DATA
tCLZ
tAA
tACP
tCAC
NOTE1
tOFF1
VALID
DATA
tOEHC
tOFF2
VALID DATA
tO AC
tOFF2
tOES
OPEN
tOEP
DON'T CARE
UNDEFINED
*NOTE : 1. tOFF1 is referenced from the rising edge of RAS or CAS , whichever occurs last.
2.
tPC can be measured from falling edge of CAS to falling edge of CAS , or from rising edge of CAS to rising
edge of CAS . Both measurements must meet the tPC specification.
Elite Memory Technology Inc
Publication Date: Aug. 2005
Revision : 1.4
9/16