M11L416256SA Datasheet, PDF (3/16 Pages) Elite Semiconductor Memory Technology Inc. – 256 K x 16 DRAM EDO PAGE MODE

EliteMT
M11L416256SA
ABSOLUTE MAXIMUM RATINGS
Voltage on Any pin Relative to Vss … ……-0.5V to +4.6V
Operating Temperature, TA (ambient) ….0 °C to +70 °C
Storage Temperature (plastic) ……….-55 °C to +150 °C
Power Dissipation …………………………………0.8W
Short Circuit Output Current ……………………50mA
Permanent device damage may occur if “Absolute
Maximum Ratings” are exceeded. This is a stress rating
only, and functional operation of the device above those
conditions indicated in the operational sections of this
specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may
affect reliability.
DC ELECTRICAL CHARACTERISTICS AND RECOMMENDED
OPERATING CONDITIONS (0 °C ≤ TA ≤ 70 °C ; VCC = 3.3V ± 10% unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL MIN MAX UNITS NOTES
Supply Voltage
Supply Voltage
Input High Voltage
Input Low Voltage
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
0V ≤ VIN ≤ VIH(max)
0V ≤ VOUT ≤ VCC
Output(s) disable
IOH = -2 mA
IOL = 2 mA
VCC
3.0
3.6
V
1
VSS
0
0
V
VIH
2.0 VCC +0.3 V
1
VIL
-0.3
0.8
V
1
ILI
-10
10
μA
ILO
-10
10
μA
VOH
2.4
-
V
VOL
-
0.4
V
Note : 1.All Voltages referenced to VSS
PARAMETER
CONDITIONS
SYMBOL
Operating Current
RAS , CAS cycling , tRC =min
ICC1
Standby Current
TTL interface , RAS , CAS = VIH ,
DOUT =High-Z
ICC2
CMOS interface, RAS , CAS ≥ VCC-0.2V
RAS only refresh Current tRC = min
ICC3
EDO Page Mode Current tPC = min
ICC4
Standby Current
RAS =VIH, CAS = VIL
ICC5
CAS Before RAS
Refresh
tRC = min
ICC6
Current
Battery Backup Current
(S-ver. only)
RAS , CAS ≤ 0.2V, DOUT = High-Z,
CMOS interface
ICC7
Self Refresh Current
(S-ver. only)
RAS = CAS = VIL,
WE = OE = A0~A8 = VCC -0.2 or 0.2V ^ICC8
DQ0~DQ15 = VCC -0.2, 0.2V or open
Note : 1. ICC max is specified at the output open condition.
2. Address can be changed twice or less while RAS =VIL .
3. Address can be changed once or less while CAS =VIH .
Elite Memory Technology Inc
MAX
-35
150
4
2
150
150
5
150
400
400
UNITS NOTES
mA 1,2
mA
mA
mA
2
mA 1,3
mA
1
mA
μA
μA
Publication Date: Aug. 2005
Revision : 1.4
3/16