M11L416256SA Datasheet, PDF (8/16 Pages) Elite Semiconductor Memory Technology Inc. – 256 K x 16 DRAM EDO PAGE MODE

EliteMT
M11L416256SA
VIH
RAS _VIL
VIH
CASL,CASH _VIL
VIH
ADDR _VIL
WE
VIH
VIL
I/O
VOH
VOL
VIH
OE _VIL
VIH
RAS _VIL
VIH
CASL,CASH _VIL
VIH
ADDR _VIL
WE
VIH
VIL
VIH
I/O _VIL
VIH
OE _VIL
tCRP
READ CYCLE
tRC
tRAS
tRCD
tCSH
tRSH
tCAS
tCLCH
tRP
tRRH
tASR
tRAD
tRAH
ROW
tAR
tASC
tRAL
tCAH
COLUMN
tRCS
tRCH
ROW
OPEN
tAA
tRAC
tCAC
tCLZ
tOAC
NOTE1
tOFF1
VALID DATA
tOFF2
OPEN
EARLY WRITE CYCLE
tRC
tRAS
tRP
tCRP
tRCD
tCSH
tRSH
tCAS
tCLCH
tASR
tRAD
tRAH
ROW
tAR
tASC
tRAL
tCAH
COLUMN
tCWL
tWCS
tRWL
tWCR
tWCH
tWP
tDHR
tDS
tDH
VALID DATA
ROW
DON'T CARE
UNDEFINED
Note: 1. tOFF1 is referenced from the rising edge of RAS or CAS , whichever occurs last.
Elite Memory Technology Inc
Publication Date: Aug. 2005
Revision : 1.4
8/16