M11L416256SA Datasheet, PDF (2/16 Pages) Elite Semiconductor Memory Technology Inc. – 256 K x 16 DRAM EDO PAGE MODE

EliteMT
FUNCTIONAL BLOCK DIAGRAM
WE
RAS
CASL
CASH
A0
A1
A2
A3
A4
A5
A6
A7
A8
CONTROL
LOGIC
CLOCK
GENERATOR
COLUMN
9 _ADDRESS
BUFFER
REFRESH
CONTROLER
REFRESH
COUNTER
99
ROW.
9 _ADDRESS
BUFFERS(9)
M11L416256SA
DATA-IN BUFFER
IO0
16
:
IO15
COLUMN
9 _DECODER
DATA-OUT
BUFFER
OE
16
512
16
SENSE AMPLIFIERS
I/O GATING 8
512 x 16
512 x 512 x 16
512
MEMORY
9
ARRAY
VCC
VBB GENERATOR
VSS
PIN DESCRIPTIONS
PIN NO.
16~19,22~26
14
28
29
13
27
2~5,7~10,31~34,36~39
1,6,20
21,35,40
11,12,15,30
PIN NAME
A0~A8
RAS
CASH
CASL
WE
OE
I/O0 ~ I/O15
VCC
VSS
NC
TYPE
DESCRIPTION
Input
Address Input
Row Address : A0~A8
Column Address : A0~A8
Input
Row Address Strobe
Input
Column Address Strobe / Upper Byte Control
Input
Column Address Strobe / Lower Byte Control
Input
Write Enable
Input
Output Enable
Input / Output Data Input / Output
Supply
Power, 3.3V
Ground
Ground
-
No Connect
Elite Memory Technology Inc
Publication Date: Aug. 2005
Revision : 1.4
2/16