M11L416256SA Datasheet, PDF (11/16 Pages) Elite Semiconductor Memory Technology Inc. – 256 K x 16 DRAM EDO PAGE MODE

EliteMT
M11L416256SA
EDO-PAGE-MODE READ-EARLY-WRITE CYCLE
(Psuedo READ-MODIFY-WRITE)
VIH
RAS _VIL
VIH
CASL,CASH _VIL
VIH
ADDR _VIL
VIH
WE _VIL
VI/OH
I/O _{VI/O L}
VIH
OE _VIL
tRASC
tCRP
tCSH
tRCD
tPC
tCAS
tCP
tCP
tCAS
tCP
tRSH
tCAS
tRAD
tASR tRAH
tAR
tASC
tCAH
ROW
COLUMN(A)
tRCS
tASC tCAH
COLUMN(B)
tRCH
tRAL
tASC tCAH
COLUMN(N)
tWCS
tWCH
tAA
tRAC
tCAC
OPEN
tO AC
tACP
tAA
tCAC
tCOH
tWHZ
VALID DATA(A)
VALID
DATA(B)
tDS tDH
VALID
DATA IN
tRP
tCP
ROW
VIH
RAS _VIL
VIH
CASL,CASH _VIL
VIH
ADDR _VIL
VOH
I/O _VOL
RAS ONLY REFRESH CYCLE
(ADDR = A0~A8 ; OE , WE = DON’T CARE)
tCRP
tASR
tRAH
ROW
tRC
tRAS
OPEN
tRP
tRPC
ROW
DON'T CARE
UNDEFINED
Elite Memory Technology Inc
Publication Date: Aug. 2005
Revision : 1.4
11/16