M13S128168A_1 Datasheet, PDF (6/49 Pages) Elite Semiconductor Memory Technology Inc. – 2M x 16 Bit x 4 Banks Double Data Rate SDRAM

ESMT
AC Operating Test Conditions
Parameter
Input reference voltage for clock (V_REF)
Input signal maximum peak swing
Input signal minimum slew rate
Input levels (V_IH/V_IL)
Input timing measurement reference level
Output timing reference level
M13S128168A
Operation temperature condition -40°C~85°C
Value
0.5*V_DDQ
1.5
1.0
V_REF+0.31/V_REF-0.31
V_REF
V_TT
Unit
V
V
V/ns
V
V
V
AC Timing Parameter & Specifications
(V_DD = 2.375V~2.75V, V_DDQ=2.375V~2.75V, T_A = -40 to 85 °C )
Parameter
Symbol
-5
min
max
Clock Period
CL3
t_CK
5.0
10
Access time from CLK/ CLK
t_AC
-0.7
+0.7
CLK high-level width
CLK low-level width
Data strobe edge to clock edge
Clock to first rising edge of DQS delay
Data-in and DM setup time (to DQS)
Data-in and DM hold time (to DQS)
DQ and DM input pulse width (for each
input)
Input setup time (fast slew rate)
Input hold time (fast slew rate)
Input setup time (slow slew rate)
Input hold time (slow slew rate)
Control and Address input pulse width
DQS input high pulse width
DQS input low pulse width
DQS falling edge to CLK rising-setup
time
DQS falling edge from CLK rising-hold
time
Data strobe edge to output data edge
Data-out high-impedance window from
CLK/ CLK
t_CH
t_CL
t_DQSCK
t_DQSS
t_DS
t_DH
t_DIPW
t_IS
t_IH
t_IS
t_IH
t_IPW
t_DQSH
t_DQSL
t_DSS
t_DSH
t_DQSQ
t_HZ
0.45
0.45
-0.6
0.75
0.45
0.45
1.75
0.75
0.75
0.8
0.8
2.2
0.4
0.4
0.2
0.2
-
-0.7
0.55
0.55
+0.6
1.25
-
-
-
-
-
-
-
-
0.6
0.6
-
-
0.45
+0.7
Data-out low-impedance window from
CLK/ CLK
t_LZ
-0.7
+0.7
-6
min
max
6.0
10
-0.7
+0.7
0.45
0.55
0.45
0.55
-0.6
+0.6
0.75
1.25
0.45
-
0.45
-
1.75
-
0.75
-
0.75
-
0.8
-
0.8
-
2.2
-
0.4
0.6
0.4
0.6
0.2
-
0.2
-
-
0.45
-0.7
+0.7
-0.7
+0.7
Unit
ns
ns
t_CK
t_CK
ns
t_CK
ns
ns
ns
ns
ns
ns
ns
ns
t_CK
t_CK
t_CK
t_CK
ns
ns
ns
Elite Semiconductor Memory Technology Inc.
Publication Date : Mar. 2009
Revision : 1.2
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