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M13S128168A_1 Datasheet, PDF (5/49 Pages) Elite Semiconductor Memory Technology Inc. – 2M x 16 Bit x 4 Banks Double Data Rate SDRAM
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ESMT
DC Specifications
M13S128168A
Operation temperature condition -40°C~85°C
Parameter
Symbol
Test Condition
Operation Current
(One Bank Active)
Operation Current
(One Bank Active)
Precharge Power-down Standby
Current
Idle Standby Current
Active Power-down Standby
Current
Active Standby Current
Operation Current (Read)
Operation Current (Write)
Auto Refresh Current
Self Refresh Current
IDD0
IDD1
IDD2P
tRC = tRC (min) tCK = tCK (min)
Active – Precharge
Burst Length = 2 tRC = tRC (min), CL= 3,
IOUT = 0mA, Active-Read- Precharge
CKE ≤ VIL(max), tCK = tCK (min),
All banks idle
IDD2N
IDD3P
IDD3N
IDD4R
IDD4W
IDD5
IDD6
CKE ≥ VIH(min), CS ≥ VIH(min),
tCK = tCK (min)
All banks ACT, CKE ≤ VIL(max),
tCK = tCK (min)
One bank; Active-Precharge,
tRC = tRAS(max), tCK = tCK (min)
Burst Length = 2, CL= 3 ,
tCK = tCK (min), IOUT = 0mA
Burst Length = 2, CL= 3 ,
tCK = tCK (min)
tRC ≥ tRFC(min)
CKE ≤ 0.2V
Note 1. Enable on-chip refresh and address counters.
AC Operation Conditions & Timing Specification
Version
-5
-6
140
140
175
150
Unit Note
mA
mA
40
40
mA
100
95
mA
50
45
mA
100
100
mA
245
215
mA
240
200
mA
270
250
mA
5
5
mA 1
AC Operation Conditions
Parameter
Input High (Logic 1) Voltage, DQ, DQS and DM signals
Input Low (Logic 0) Voltage, DQ, DQS and DM signals
Input Different Voltage, CLK and CLK inputs
Symbol
VIH(AC)
VIL(AC)
VID(AC)
Min
VREF + 0.31
0.7
Max
VREF - 0.31
VDDQ+0.6
Unit
V
V
V
Note
1
Input Crossing Point Voltage, CLK and CLK inputs
VIX(AC) 0.5*VDDQ-0.2 0.5*VDDQ+0.2
V
2
Note1. VID is the magnitude of the difference between the input level on CLK and the input on CLK .
2. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the DC level of the
same.
Input / Output Capacitance
(VDD = 2.375V~2.75V, VDDQ =2.375V~2.75V, TA = 25 °C , f = 1MHz)
Parameter
Input capacitance
(A0~A11, BA0~BA1, CKE, CS , RAS , CAS , WE )
Input capacitance (CLK, CLK )
Data & DQS input/output capacitance
Input capacitance (DM)
Symbol
CIN1
CIN2
COUT
CIN3
Min
Max
Unit
2.5
3.5
pF
2.5
3.5
pF
4.0
5.5
pF
4.0
5.5
pF
Elite Semiconductor Memory Technology Inc.
Publication Date : Mar. 2009
Revision : 1.2
5/49
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