M13S128168A_1 Datasheet, PDF (40/49 Pages) Elite Semiconductor Memory Technology Inc. – 2M x 16 Bit x 4 Banks Double Data Rate SDRAM

ESMT
Write followed by Precharge (@BL=4)
0
1
CLK
CLK
CKE
2
3
M13S128168A
Operation temperature condition -40°C~85°C
4
5
6
7
8
9
10
HIGH
CS
RAS
CAS
BA0,BA1
BAa
BAa
A10/AP
ADDR
Ca
(A0~An)
WE
DQS
tWR
DQ
DM
COMMAND
Da0 Da1 Da2 Da3
WRITE
PRE
CHAR GE
Elite Semiconductor Memory Technology Inc.
Publication Date : Mar. 2009
Revision : 1.2
40/49