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M13S2561616A-2S Datasheet, PDF (10/49 Pages) Elite Semiconductor Memory Technology Inc. – Double-data-rate architecture, two data transfers per clock cycle
ESMT
M13S2561616A (2S)
Operation Temperature Condition -40°C~85°C
AC Timing Parameter & Specifications – continued
Parameter
Symbol
-5
min
max
-6
min
max
Unit Note
Active to Precharge command
Active to Active / Auto Refresh
command period
tRAS
40
70K
42
70K ns
tRC
55
60
ns
Auto Refresh to Active / Auto Refresh
command period
tRFC
70
72
ns
Active to Read, Write delay
Precharge command period
Active to Read with Auto Precharge
command
tRCD
15
tRP
15
tRAP
15
18
ns
18
ns
18
ns
Active bank A to Active bank B
command
tRRD
10
12
ns
Write recovery time
tWR
15
15
ns
Write data in to Read command delay
tWTR
2
2
tCK
Average periodic refresh interval
tREFI
7.8
7.8
us
14
Write preamble
tWPRE
0.25
0.25
tCK
Write postamble
tWPST
0.4
0.6
0.4
0.6
tCK
12
Read preamble
tRPRE
0.9
1.1
0.9
1.1
tCK
Read postamble
tRPST
0.4
0.6
0.4
0.6
tCK
Clock to DQS write preamble setup time tWPRES
0
0
ns
13
Mode Register Set command cycle time tMRD
2
2
tCK
Exit self refresh to Read command
tXSRD
200
200
tCK
Exit self refresh to non-Read command
Auto Precharge write
recovery+precharge time
tXSNR
tDAL
75
(tWR/tCK)
+
(tRP/tCK)
75
(tWR/tCK)
+
(tRP/tCK)
ns
tCK
23
Notes:
1.
2.
3.
All voltages referenced to VSS.
Tests for AC timing, IDD, and electrical, AC and DC characteristics, may be conducted at nominal reference/supply
voltage levels, but the related specifications and device operation are guaranteed for the full voltage range specified.
The below figure represents the timing reference load used in defining the relevant timing parameters of the part. It is
not intended to be either a precise representation of the typical system environment nor a depiction of the actual load
presented by a production tester. System designers will use IBIS or other simulation tools to correlate the timing
reference load to a system environment. Manufacturers will correlate to their production test conditions (generally a
coaxial transmission line terminated at the tester electronics).
Elite Semiconductor Memory Technology Inc.
Publication Date : Jan. 2015
Revision : 1.0
10/49