E1729E30 Datasheet, PDF (14/33 Pages) Elpida Memory – 1G bits DDR3 SDRAM

EDJ1108DJBG, EDJ1116DJBG
Table 7: IDD1 Measurement-Loop Pattern
CK,
Sub Cycle Com-
A11
A7 A3 A0
/CK
CKE -Loop number mand /CS /RAS /CAS /WE ODT BA*³ -Am A10 -A9 -A6 -A2 Data*²
0
ACT 0
0
1
1
0
0
0
0
0 0 0⎯
1, 2
D, D 1
0
0
0
0
0
0
0
0 0 0⎯
3, 4
/D, /D 1
1
1
1
0
0
0
0
0 0 0⎯
…
Repeat pattern 1...4 until nRCD − 1, truncate if necessary
nRCD RD 0
1
0
1
0
0
0
0
0 0 0 00000000
…
Repeat pattern 1...4 until nRAS − 1, truncate if necessary
nRAS PRE 0
0
1
0
0
0
0
0
0 0 0⎯
…
Repeat pattern 1...4 until nRC − 1, truncate if necessary
1 × nRC _{ACT 0}
0
1
1
0
0
0
0
0 F 0⎯
+0
0
1 × nRC
+ 1, 2
D, D 1
0
0
0
0
0
0
0
0 F 0⎯
Toggling Static H
1 × nRC
/D, /D 1
1
1
1
0
0
0
0
0 F 0⎯
+ 3, 4
…
Repeat pattern nRC + 1,..., 4 until nRC + nRCD − 1, truncate if necessary
1 × nRC _{RD 0}
1
0
1
0
0
0
0
0 F 0 00110011
+ nRCD
…
Repeat pattern nRC + 1,..., 4 until nRC +nRAS − 1, truncate if necessary
1 × nRC _{PRE 0}
+ nRAS
0
1
0
0
0
0
0
0 F 0⎯
…
Repeat pattern nRC + 1,..., 4 until 2 × nRC − 1, truncate if necessary
1
2 × nRC Repeat Sub-Loop 0, use BA= 1 instead
2
4 × nRC Repeat Sub-Loop 0, use BA= 2 instead
3
6 × nRC Repeat Sub-Loop 0, use BA= 3 instead
4
8 × nRC Repeat Sub-Loop 0, use BA= 4 instead
5
10 × nRC Repeat Sub-Loop 0, use BA= 5 instead
6
12 × nRC Repeat Sub-Loop 0, use BA= 6 instead
7
14 × nRC Repeat Sub-Loop 0, use BA= 7 instead
Notes: 1.
2.
3.
4.
DM must be driven low all the time. DQS, /DQS are used according to read commands, otherwise MID-LEVEL.
Burst sequence driven on each DQ signal by read command. Outside burst operation, DQ signals are MID-LEVEL.
BA: BA0 to BA2.
Am: m means Most Significant Bit (MSB) of Row address.
Data Sheet E1729E30 (Ver. 3.0)
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