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HB52F168GB-B Datasheet, PDF (12/19 Pages) Elpida Memory – 128 MB Unbuffered SDRAM Micro DIMM 16-Mword × 64-bit, 133/100 MHz Memory Bus, 1-Bank Module (4 pcs of 16 M × 16 components) PC133/100 SDRAM
HB52F168GB-B, HB52D168GB-B
Capacitance (Ta = 25°C, VCC = 3.3 V ± 0.3 V)
Parameter
Symbol
Max
Unit
Notes
Input capacitance (Address)
CIN
40
pF
1, 2, 4
Input capacitance (RE, CE, W, CK0/CK1, CKE0) CIN
40
pF
1, 2, 4
Input capacitance (S0)
CIN
40
pF
1, 2, 4
Input capacitance (DQMB0 to DQMB7)
CIN
20
pF
1, 2, 4
Input/Output capacitance (DQ0 to DQ63)
CI/O
20
pF
1, 2, 3, 4
Notes: 1. Capacitance measured with Boonton Meter or effective capacitance measuring method.
2. Measurement condition: f = 1 MHz, 1.4 V bias, 200 mV swing.
3. DQMB = VIH to disable Data-out.
4. This parameter is sampled and not 100% tested.
Data Sheet E0008H10
12