HB52F168GB-B Datasheet, PDF (1/19 Pages) Elpida Memory – 128 MB Unbuffered SDRAM Micro DIMM 16-Mword × 64-bit, 133/100 MHz Memory Bus, 1-Bank Module (4 pcs of 16 M × 16 components) PC133/100 SDRAM

HB52F168GB-B
HB52D168GB-B
128 MB Unbuffered SDRAM Micro DIMM
16-Mword × 64-bit, 133/100 MHz Memory Bus, 1-Bank Module
(4 pcs of 16 M × 16 components)
PC133/100 SDRAM
E0008H10 (1st edition)
(Previous ADE-203-1219A (Z))
Jan. 19, 2001
Description
The HB52F168GB and HB52D168GB are a 16M × 64 × 1 banks Synchronous Dynamic RAM Micro Dual
In-line Memory Module (Micro DIMM), mounted 4 pieces of 256-Mbit SDRAM (HM5225165BTT) sealed
in TSOP package and 1 piece of serial EEPROM (2-kbit EEPROM) for Presence Detect (PD). An outline of
the products is 144-pin Zig Zag Dual tabs socket type compact and thin package. Therefore, they make high
density mounting possible without surface mount technology. They provide common data inputs and outputs.
Decoupling capacitors are mounted beside TSOP on the module board.
Features
• 144-pin Zig Zag Dual tabs socket type (dual lead out)
 Outline: 38.00 mm (Length) × 30.00 mm (Height) × 3.80 mm (Thickness)
 Lead pitch: 0.50 mm
• 3.3 V power supply
• Clock frequency: 133/100 MHz (max)
• LVTTL interface
• Data bus width: × 64 Non parity
• Single pulsed RAS
• 4 Banks can operates simultaneously and independently
• Burst read/write operation and burst read/single write operation capability
• Programmable burst length: 1/2/4/8
• 2 variations of burst sequence
 Sequential
 Interleave
This product became EOL in September, 2002.
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.