HB52F168GB-B Datasheet, PDF (10/19 Pages) Elpida Memory – 128 MB Unbuffered SDRAM Micro DIMM 16-Mword × 64-bit, 133/100 MHz Memory Bus, 1-Bank Module (4 pcs of 16 M × 16 components) PC133/100 SDRAM

HB52F168GB-B, HB52D168GB-B
Absolute Maximum Ratings
Parameter
Voltage on any pin relative to V_SS
Symbol
V_T
Supply voltage relative to V_SS
Short circuit output current
Power dissipation
Operating temperature
Storage temperature
Note: 1. Respect to V_SS.
V_CC
Iout
P_T
Topr
Tstg
Value
Unit
–0.5 to V_CC + 0.5
V
(≤ 4.6 (max))
–0.5 to +4.6
V
50
mA
4.0
W
0 to +65
°C
–55 to +125
°C
Note
1
1
DC Operating Conditions (Ta = 0 to +65°C)
Parameter
Symbol
Min
Max
Supply voltage
V_CC
3.0
3.6
V_SS
0
0
Input high voltage
V_IH
2.0
V_CC + 0.3
Input low voltage
V_IL
–0.3
0.8
Notes: 1. All voltage referred to V_SS
2. The supply voltage with all V_CC pins must be on the same level.
3. The supply voltage with all V_SS pins must be on the same level.
4. V_IH (max) = V_CC + 2.0 V for pulse width ≤ 3 ns at V_CC.
5. V_IL (min) = V_SS – 2.0 V for pulse width ≤ 3 ns at V_SS.
Unit
V
V
V
V
Notes
1, 2
3
1, 4
1, 5
Data Sheet E0008H10
10