E909-05 Datasheet, PDF (8/67 Pages) ELMOS Semiconductor AG – The HALIOS® multi purpose optical sensor is based on an optical bridge which provides a contactless detec-tion of gestures (e.g. movement of a finger).

HALIOS® MULTI-PURPOSE OPTICAL SENSOR WITH HIGH LIGHT IMMUNITY
E909.05
PRELIMINARY INFORMATION AUG 02, 2011
4.4 Module Description
4.4.1 I²C Interface
No. Parameter
Condition
1 SDA/SCL: Input voltage low ¹)
2 SDA/SCL: Input voltage high ¹)
3
SDA/SCL: Hysteresis of
Schmitt trigger inputs 
VDDI > 2.0 V
4
VDDI < 2.0 V
5
SDA/SCL: Output voltage low, I = 3 mA
(open drain)
VDDI > 2.0 V
6
7 SDA/SCL: Input current
I = 3 mA
VDDII < 2.0 V
0 < VIN < VDDI
8 SDA/SCL: capacitance 
9 SCL clock frequency
10
Hold time (repeated) START
condition 
11 LOW period of SCL clock
12 HIGH period of SCL clock
13
Set-up time for repeated start
condition 
14 Data hold time 
15 Data set-up time 
Rise time of SDA and SCL sig-
16 nals with a bus capacitance
(Cb) from 10 pF to 400 pF 
Fall time of SDA and SCL sig-
17 nals with a bus capacitance
(Cb) from 10 pF to 400 pF 
SDA/SCL: Output fall time
18
from VIH to VIL with a bus capa-
citance (Cb) from 10 pF to 400
pF 
19
Set-up time for STOP condi-
tion 
20
Bus free time between STOP
and START 
Pulse width of spikes which
21 must be suppressed by the
ASIC-internal input filter
Table 4.4.1.1 I²C Interface
 : Will not be tested in production test
Symbol
VIL
VIH
Min.
-0.3
0.7·VDDI
Typ.
Max.
0.3·VDDI
VDDI + 0.3
Vhys
0.05 · VDDI
-
Vhys
0.1 · VDDI
-
VOL
0.4
Unit
V
V
V
V
V
VOL
Ii
Ci
fSCL
t HD.:STA
t LOW
t HIGH
t SU.:STA
t HD.DAT
t SU:DAT
tr
-10
-
0
600
1300
600
600
0
100
20 +
0.1·Cb
0.2 · VDDI
V
10
µA
10
pF
400
kHz
-
ns
-
ns
-
ns
-
ns
900
ns
-
ns
300
ns
tf
20 +
0.1·Cb
300
ns
tof
20 +
0.1·Cb
250
ns
t SU:STO
t BUF
600
1300
-
ns
-
ns
tSP
0
50
ns
This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice.
ELMOS Semiconductor AG
Data Sheet 8 / 67
QM-No.: 25DS0014E.00