GP200MHS18 Datasheet, PDF (9/10 Pages) Dynex Semiconductor – Half Bridge IGBT Module

GP200MHS18
PACKAGE DETAILS
For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless
stated otherwise. DO NOT SCALE.
28 ± 0.5
28 ± 0.5
11
10
1
2
3
8
9
3x M6
93 ± 0.3
6
7
4x Fast on
tabs
5
4
8
106 ± 0.8
108 ± 0.8
Nominal weight: 270g
Recommeded fixings for mounting: M6
Recommended mounting torque: 5Nm (44lbs.ins)
Recommended torque for electrical connections (M6): 5Nm (44lbs.ins)
Module outline type code: M
ASSOCIATED PUBLICATIONS
Title
Electrostatic handling precautions
An introduction to IGBTs
IGBT ratings and characteristics
Heatsink requirements for IGBT modules
Calculating the junction temperature of power semiconductors
Gate drive considerations to maximise IGBT efficiency
Parallel operation of IGBTs – punch through vs non-punch through characteristics
Guidance notes for formulating technical enquiries
Principle of rating parallel connected IGBT modules
Short circuit withstand capability in IGBTs
Driving Dynex Semincoductor IGBT modules with Concept gate drivers
Application Note
Number
AN4502
AN4503
AN4504
AN4505
AN4506
AN4507
AN4508
AN4869
AN5000
AN5167
AN5384
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
9/10
www.dynexsemi.com