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| GP200MHS18 Datasheet, PDF (4/10 Pages) Dynex Semiconductor – Half Bridge IGBT Module | |||
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GP200MHS18
ELECTRICAL CHARACTERISTICS
Tcase = 25ËC unless stated otherwise
Symbol
Parameter
td(off)
Turn-off delay time
t
Fall time
f
EOFF
Turn-off energy loss
td(on)
Turn-on delay time
tr
Rise time
E
Turn-on energy loss
ON
Qrr
Diode reverse recovery charge
Tcase = 125ËC unless stated otherwise
Symbol
Parameter
td(off)
Turn-off delay time
tf
Fall time
E
Turn-off energy loss
OFF
td(on)
Turn-on delay time
tr
Rise time
EON
Turn-on energy loss
Q
Diode reverse recovery charge
rr
Test Conditions
IC = 200A
VGE = ±15V
VCE = 900V
R
G(ON)
=
R
G(OFF)
=
4.7â¦
L ~ 100nH
IF = 200A, VR = 50% VCES,
dIF/dt = 2400A/µs
Min. Typ. Max. Units
-
500 650 ns
-
200 300 ns
-
50 120 mJ
-
450 600 ns
-
90 120 ns
-
60
80 mJ
-
50
80 µC
Test Conditions
IC = 200A
VGE = ±15V
VCE = 900V
RG(ON) = RG(OFF) = 4.7â¦
L ~ 100nH
IF = 200A, VR = 50% VCES,
dIF/dt = 2000A/µs
Min. Typ. Max. Units
-
600 800 ns
-
300 400 ns
-
100 150 mJ
-
540 700 ns
-
100 130 ns
-
100 120 mJ
-
80
110 µC
4/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
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