GP200MHS18 Datasheet, PDF (1/10 Pages) Dynex Semiconductor – Half Bridge IGBT Module

GP200MHS18
FEATURES
s Non Punch Through Silicon
s Isolated Copper Baseplate
s Low Inductance Internal Construction
s 200A Per Arm
GP200MHS18
Half Bridge IGBT Module
DS5304-3.1 January 2001
KEY PARAMETERS
V_CES
V_CE(sat)
I_C
I_C(PK)
(typ)
(max)
(max)
1800V
3.5V
200A
400A
APPLICATIONS
s High Power Inverters
s Motor Controllers
s Induction Heating
s Resonant Converters
The Powerline range of high power modules includes half
bridge, dual and single switch configurations covering voltages
from 600V to 3300V and currents up to 4800A.
The GP200MHS18 is a half bridge 1800V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) ensuring reliability in demanding applications.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
ORDERING INFORMATION
Order As:
GP200MHS18
Note: When ordering, please use the whole part number.
11(C²)
1(E₁C₂)
9(C¹)
2(E₂)
6(G²)
7(E²)
3(C₁)
5(E¹)
4(G¹)
Fig. 1 Half bridge circuit diagram
11
1
2
3
6
10
7
8
5
9
4
Outline type code: M
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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