GP200MHS18 Datasheet, PDF (3/10 Pages) Dynex Semiconductor – Half Bridge IGBT Module

GP200MHS18
ELECTRICAL CHARACTERISTICS
T_case = 25˚C unless stated otherwise.
Symbol
Parameter
I_CES
Collector cut-off current
I_GES
V_GE(TH)
V_CE(sat)
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
I_F
Diode forward current
I_FM
Diode maximum forward current
V
Diode forward voltage
F
C_ies
Input capacitance
L_M
Module inductance
Test Conditions
V_GE = 0V, V_CE = V_CES
V_GE = 0V, V_CE = V_CES, T_case = 125˚C
V_GE = ±20V, V_CE = 0V
I = 10mA, V = V
C
GE
CE
V_GE = 15V, I_C = 200A
V_GE = 15V, I_C = 200A, , T_case = 125˚C
DC
t_p = 1ms
I = 200A
F
I_F = 200A, T_case = 125˚C
V = 25V, V = 0V, f = 1MHz
CE
GE
-
Min. Typ. Max. Units
-
-
1
mA
-
-
7
mA
-
-
1
µA
4.5
5.5
6.5
V
-
3.5
4
V
-
4.3
5
V
-
-
200 A
-
-
400 A
-
2.2
2.5
V
-
2.3
2.6
V
-
25
-
nF
-
30
-
nH
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
3/10
www.dynexsemi.com