GP200MHS18 Datasheet, PDF (7/10 Pages) Dynex Semiconductor – Half Bridge IGBT Module

GP200MHS18
400
350
T_j = 25˚C
300
250
T_j = 125˚C
200
150
100
50
0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5
Foward voltage, V_F - (V)
Fig. 11 Diode typical forward characteristics
500
450
400
350
300
250
200
150
100
T_case = 125˚C
V_ge = ±15V
50 ^{Rg(min) = 5Ω}
R_g(min) : Minimum recommended value
0
0
400
800
1200
1600
Collector-emitter voltage, V_ce - (V)
Fig. 12 Reverse bias safe operating area
2000
1000
I_C max. (single pulse)
1000
Diode
100
100
50µs
Transistor
10
100µs
t_p = 1ms
10
1
0.1
1
10
100
1000
Collector-emitter voltage, V_ce - (V)
10000
Fig. 13 Forward bias safe operating area
1
1
10
100
1000
10000
Pulse width, t_p - (ms)
Fig. 11 Transient thermal impedance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
7/10
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