GP200MHS18 Datasheet, PDF (8/10 Pages) Dynex Semiconductor – Half Bridge IGBT Module

GP200MHS18
500
450
PWM Sine Wave.
400
Power Factor = 0.9,
Modulation Index = 1
350
300
250
200
150
100
Conditions:
50 T_j = 125°C, T_c = 75°C,
R_g = 5Ω, V_CC = 900V
0
1
10
50
f_max - (kHz)
Fig. 12 3 Phase inverter operating frequency
300
250
200
150
100
50
0
0 20 40 60 80 100 120 140 160
Case temperature, T_case - (˚C)
Fig. 13 DC current rating vs case temperature
8/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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