GP200MHS18 Datasheet, PDF (5/10 Pages) Dynex Semiconductor – Half Bridge IGBT Module

GP200MHS18
TYPICAL CHARACTERISTICS
400
Common emitter
T_case = 25˚C
350
V_ge = 20/15/12V
300
V_ge = 10V
250
200
150
100
50
0
0
1.0 2.0 3.0 4.0 5.0 6.0 7.0
Collector-emitter voltage, V_ce - (V)
Fig. 3 Typical output characteristics
400
Common emitter
350 ^{Tcase = 125˚C}
V_ge = 20/15/12V
300
V_ge = 10V
250
200
150
100
50
0
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
Collector-emitter voltage, V_ce - (V)
Fig. 4 Typical output characteristics
250
T_case = 25˚C
V_GE = ±15V
V_CE = 900V
200
A: R_g = 15Ω
B: R_g = 10Ω
C: R_g = 4.7Ω
150
A
100
B
C
50
0
0
50
100
150
200
Collector current, I_C - (A)
Fig. 5 Typical turn-on energy vs collector current
300
T_case = 125˚C
V_GE = ±15V
V_CE = 900V
250
A
200
B
150
100
C
50
A: R_g = 15Ω
B: R_g = 10Ω
C: R_g = 4.7Ω
0
0
50
100
150
200
Collector current, I_C - (A)
Fig. 6 Typical turn-on energy vs collector current
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/10
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