GP200MHS18 Datasheet, PDF (6/10 Pages) Dynex Semiconductor – Half Bridge IGBT Module

GP200MHS18
100
T_case = 25˚C
90 ^VGE ^{= ±15V}
V_CE = 900V
A
80
70
B
60
50
C
40
30
20
A: R_g = 15Ω
10
B: R_g = 10Ω
C: R_g = 4.7Ω
0
0
50
100
150
200
Collector current, I_C - (A)
Fig. 7 Typical turn-off energy vs collector current
240
T_case = 125˚C
220 _{VGE = ±15V}
200 ^{VCE = 900V}
180
A
160
140
B
120
100
C
80
60
40
A: R_g = 15Ω
20
B: R_g = 10Ω
C: R_g = 4.7Ω
0
0
50
100
150
200
Collector current, I_C - (A)
Fig. 8 Typical turn-off energy vs collector current
30
V_GE = ±15V
V_CE = 900V
25
20
T_case = 125˚C
15
T_case = 25˚C
10
5
0
0 25 50 75 100 125 150 175 200
Collector current, I_T - (A)
Fig. 9 Typical diode turn-off energy vs collector current
2400
2200
2000
1800
T_case = 125˚C
V_GE = ±15V
V_CE = 900V
R_g = 4.7Ω
1600
1400
t_f
1200
1000
800
t_d(off)
600 _td(on)
400
200
0
0
t_r
20 40 60 80 100 120 140 160 180 200
Collector current, I_C - (A)
Typical switching times vs collector current
Fig. 10 Typical switching characteristics vs collector current
6/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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