DG858BW45 Datasheet, PDF (9/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

DG858BW45
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
t_r
Conditions:
T_j = 125˚C, I_FGM = 40A
Cs = 3.0µF, Rs = 10 Ohms,
dI_T/dt = 300A/µs, V_D = 2000V
t_d
500
1000
1500
2000
2500
On-state current I_T - (A)
Fig.ure 14. Delay and rise time vs on-state current
12.0
11.0
10.0
9.0
8.0
Conditions:
I_T = 3000A
T_j = 125˚C
Cs = 3.0µF
Rs = 10 Ohms
dI_T/dt = 300A/µs
dI_FG/dt = 40A/µs
V_D = 2000V
7.0
6.0
5.0
t_r
4.0
3.0
2.0
t_d
1.0
0 10 20 30 40 50 60 70 80
Peak forward gate current I_FGM - (A)
Figure 15. Delay and rise time vs peak forward gate current
3000
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