DG858BW45 Datasheet, PDF (15/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

1000
900
Conditions:
I_T = 3000A
C_S = 3.0µF
800
T_j = 125˚C
T_j = 25˚C
DG858BW45
700
600
20 25 30 35 40 45 50 55 60
Rate of rise of reverse gate current dI_GQ/dt - (A/µs)
Figure 26. Reverse gate current vs rate of rise of reverse gate current
12000
Conditions:
10000
C_S = 3.0µF
dI_GQ/dt = 40A/µs
8000
T_j = 125˚C
6000
T_j = 25˚C
4000
2000
0
0
500
1000
1500
2000
2500
3000
On-state current I_T - (A)
Figure 27. Turn-off gate charge vs on-state current
15/19