DG858BW45 Datasheet, PDF (16/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

DG858BW45
15000
14000
13000
Conditions:
I_T = 3000A
C_S = 3.0µF
12000
11000
T_j = 125˚C
10000
9000
8000
T_j = 25˚C
7000
20 25 30 35 40 45 50 55 60
Rate of rise of reverse gate current dI_GQ/dt - (A/µs)
Figure 28. Turn-off gate charge vs rate of rise of reverse gate current
1000
T_j = 125˚C
500
V_D = 2250V
V_D = 3000V
0
0.1
1.0
10
100
1000
Gate cathode resistance R_GK - (Ohms)
Figure 29. Rate of rise of off-state voltage vs gate cathode resistance
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